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High-electron-mobility transistor
Results: 96

#	Item
81	Curriculum Vitae of Huili Grace Xing (updated on May 9, 2014) Contact Information 275 Fitzpatrick Hall, Department of Electrical Engineering University of Notre Dame, Notre Dame, IN 46556 Add to Reading List Source URL: www3.nd.edu Language: English - Date: 2014-05-10 16:51:13 Nitrides International Electron Devices Meeting Graphene Transistor Office of Naval Research High electron mobility transistor Light-emitting diode Wide bandgap semiconductors Chemistry Semiconductor devices Gallium nitride
82	Energy Harvesting & Energy Efficient Micro / Nanoelectronics @ Glasgow Prof Douglas J. Paul Director: James Watt Nanofabrication Centre School of Engineering, University of Glasgow Add to Reading List Source URL: www.ict-energy.eu Language: English - Date: 2014-05-08 07:14:22 Nanoelectronics Nanowire Monolithic microwave integrated circuit Gallium arsenide High electron mobility transistor Nanotechnology Microelectromechanical systems Nanolithography Chemistry Electronics Electromagnetism
83	Microsoft PowerPoint - GaN_MOS_Compact_Models3_9_04_Shur Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:38:49 Gallium nitride Field-effect transistor Indium nitride Aluminium gallium nitride High electron mobility transistor Transistor MOSFET Aluminium nitride Silicon carbide Chemistry Nitrides Indium gallium nitride
84	1 Compact Modeling of Intrinsic Capacitance in AlGaN/GaN HEMT Devices S. Khandelwal and T. A. Fjeldly [removed], [removed] Add to Reading List Source URL: www.techconnectworld.com Language: English - Date: 2012-11-12 14:58:07 Heterojunction 2DEG High electron mobility transistor Gallium nitride Chemistry Nitrides Aluminium gallium nitride
85	WIN Semi Reports 4Q2013 FY13 Results[removed]finalx Add to Reading List Source URL: www.winsemiconductorscorp.com Language: English - Date: 2014-03-06 20:18:14 High electron mobility transistor Gallium arsenide 4G 3GPP Long Term Evolution Smartphone Chemistry Electronics Technology
86	HIGH INTERCEPT LOW NOISE AMPLIFIER with GaAs pHEMT MMIC By: Goran Popovic AD6IW Abstract Design requirements for LNA: Simple construction, small size, no tune, low noise, wide band, high linearity, unconditional stable, Add to Reading List Source URL: www.newsvhf.com Language: English - Date: 2010-10-26 14:33:30 Low-noise amplifier Noise Electronic circuits Monolithic microwave integrated circuit Amplifier High electron mobility transistor Electronic filter Bias tee Noise figure Electronics Electronic engineering Technology
87	FOR IMMEDIATE RELEASE No[removed]Product Inquiries High Frequency Device Marketing Section Add to Reading List Source URL: www.mitsubishielectric.com Language: English - Date: 2014-02-17 01:20:19 Inorganic compounds Semiconductor devices Gallium nitride Nitrides Units of measure Transistor High electron mobility transistor DBm Amplifier Chemistry Technology Compound semiconductors
88	FOR IMMEDIATE RELEASE No.2506 Product Inquiries High Frequency Device Marketing Sect Add to Reading List Source URL: www.mitsubishielectric.com Language: English - Date: 2014-02-17 01:20:19 Compound semiconductors Inorganic compounds Semiconductor devices Solar cells High electron mobility transistor Transistor Gallium nitride Gallium arsenide Amplifier Chemistry Electronics Technology
89	GaAs MMIC Power Amplifier Add to Reading List Source URL: www.amcomusa.com Language: English - Date: 2010-08-19 12:17:37 Monolithic microwave integrated circuit High electron mobility transistor Gallium arsenide Chemistry Electronics Electromagnetism
90	MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Add to Reading List Source URL: www.mwtinc.com Language: English - Date: 2006-01-16 13:34:12 Units of measure Radio Noise DBm Frequency modulation High electron mobility transistor Transistor Bandwidth Wideband Electronics Chemistry Technology

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